MOSFET N-CH 300V 2.4A DPAK FQD3N30TM
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Description:
MOSFET N-CH 300V 2.4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD3N30TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15318,Price reference "real-time change" China/Hongkong。 FQD3N30TM package/specs, Download FQD3N30TM、Datasheet。