MOSFET N-CH 250V 3.6A I2PAK FQI4N25TU
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Description:
MOSFET N-CH 250V 3.6A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI4N25TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory66558,Price reference "real-time change" China/Hongkong。 FQI4N25TU package/specs, Download FQI4N25TU、Datasheet。