MOSFET N-CH 600V 1.9A DPAK FQD2N60CTF
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Description:
MOSFET N-CH 600V 1.9A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD2N60CTF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84897,Price reference "real-time change" China/Hongkong。 FQD2N60CTF package/specs, Download FQD2N60CTF、Datasheet。