MOSFET N-CH 80V 9.3A I2PAK FQI9N08LTU
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Description:
MOSFET N-CH 80V 9.3A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI9N08LTU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory54400,Price reference "real-time change" China/Hongkong。 FQI9N08LTU package/specs, Download FQI9N08LTU、Datasheet。