MOSFET N-CH 60V 4A TO252AA RFD4N06LSM9A
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Description:
MOSFET N-CH 60V 4A TO252AA
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
RFD4N06LSM9A(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23598,Price reference "real-time change" China/Hongkong。 RFD4N06LSM9A package/specs, Download RFD4N06LSM9A、Datasheet。