MOSFET P-CH 100V 4.5A I2PAK FQI5P10TU
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Description:
MOSFET P-CH 100V 4.5A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI5P10TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44076,Price reference "real-time change" China/Hongkong。 FQI5P10TU package/specs, Download FQI5P10TU、Datasheet。