MOSFET N-CH 100V 5.6A I2PAK IRLW510ATM
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Description:
MOSFET N-CH 100V 5.6A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRLW510ATM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24414,Price reference "real-time change" China/Hongkong。 IRLW510ATM package/specs, Download IRLW510ATM、Datasheet。