MOSFET N-CH 200V 3.3A I2PAK IRLW610ATM
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Description:
MOSFET N-CH 200V 3.3A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRLW610ATM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13120,Price reference "real-time change" China/Hongkong。 IRLW610ATM package/specs, Download IRLW610ATM、Datasheet。