MOSFET N-CH 150V 9A D2PAK FQB9N15TM
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Description:
MOSFET N-CH 150V 9A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB9N15TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1854,Price reference "real-time change" China/Hongkong。 FQB9N15TM package/specs, Download FQB9N15TM、Datasheet。