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    Home/    Category/    MOSFET/    FQD12P10TF

    MOSFET P-CH 100V 9.4A TO252 FQD12P10TF

    FQD12P10TF image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FQD12P10TF
    Description:
    MOSFET P-CH 100V 9.4A TO252
    Stock:
    19845
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    9.4A(Tc)
  • Drain source voltage (Vdss)
    100 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    27 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    800 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    290 mΩ @ 4.7A,10V
  • Power dissipation (maximum)
    2.5W(Ta),50W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    4V @ 250µA
  • packing
    TR
  • series
    QFET®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-252AA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    FQD12P10TF（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19845,Price reference "real-time change" China/Hongkong。 FQD12P10TF package/specs, Download FQD12P10TF、Datasheet。
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    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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