MOSFET P-CH 200V 2.8A D2PAK FQB3P20TM
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Description:
MOSFET P-CH 200V 2.8A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB3P20TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37498,Price reference "real-time change" China/Hongkong。 FQB3P20TM package/specs, Download FQB3P20TM、Datasheet。