MOSFET N-CH 600V 2.4A DPAK FQD3N60TF
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Description:
MOSFET N-CH 600V 2.4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD3N60TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31825,Price reference "real-time change" China/Hongkong。 FQD3N60TF package/specs, Download FQD3N60TF、Datasheet。