MOSFET N-CH 500V 4A DPAK FQD5N50CTF
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Description:
MOSFET N-CH 500V 4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD5N50CTF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9070,Price reference "real-time change" China/Hongkong。 FQD5N50CTF package/specs, Download FQD5N50CTF、Datasheet。