MOSFET N-CH 200V 6.6A D2PAK FQB7N20TM
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Description:
MOSFET N-CH 200V 6.6A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB7N20TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95156,Price reference "real-time change" China/Hongkong。 FQB7N20TM package/specs, Download FQB7N20TM、Datasheet。