MOSFET N-CH 55V 3A SOT223-4 HUFA75309T3ST
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Description:
MOSFET N-CH 55V 3A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUFA75309T3ST(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9115,Price reference "real-time change" China/Hongkong。 HUFA75309T3ST package/specs, Download HUFA75309T3ST、Datasheet。