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MOSFET P-CH 20V 8.8A 8TSSOP FDW252P

FDW252P image
The pictures are for reference only
Brand:
Model:
FDW252P
Description:
MOSFET P-CH 20V 8.8A 8TSSOP
Stock:
31106
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    8.8A(Ta)
  • Drain source voltage (Vdss)
    20 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    2.5V,4.5V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    66 nC @ 4.5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    5045 pF @ 10 V
  • On resistance (maximum) for different Ids and Vgs
    12.5 mΩ @ 8.8A,4.5V
  • Power dissipation (maximum)
    1.3W(Ta)
  • Vgs (max)
    ±12V
  • Vgs (th) (maximum) for different Ids
    1.5V @ 250µA
  • packing
    TR
  • series
    PowerTrench®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-TSSOP
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
  • PDFicoDataSheet
    FDW252P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31106,Price reference "real-time change" China/Hongkong。 FDW252P package/specs, Download FDW252P、Datasheet。
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