MOSFET N-CH 500V 4.5A DPAK FQD6N50CTF
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Description:
MOSFET N-CH 500V 4.5A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD6N50CTF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42386,Price reference "real-time change" China/Hongkong。 FQD6N50CTF package/specs, Download FQD6N50CTF、Datasheet。