MOSFET N-CH 30V 10A 8SOIC FQS4410TF
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Description:
MOSFET N-CH 30V 10A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQS4410TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77003,Price reference "real-time change" China/Hongkong。 FQS4410TF package/specs, Download FQS4410TF、Datasheet。