MOSFET N-CH 800V 3A TO220F-3 FQPF3N80CYDTU
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Description:
MOSFET N-CH 800V 3A TO220F-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQPF3N80CYDTU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory88815,Price reference "real-time change" China/Hongkong。 FQPF3N80CYDTU package/specs, Download FQPF3N80CYDTU、Datasheet。