MOSFET N-CH 1000V 1.6A DPAK FQD2N100TF
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Description:
MOSFET N-CH 1000V 1.6A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD2N100TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory85556,Price reference "real-time change" China/Hongkong。 FQD2N100TF package/specs, Download FQD2N100TF、Datasheet。