MOSFET N-CH 100V 18A TO252AA HUF76619D3S
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Description:
MOSFET N-CH 100V 18A TO252AA
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF76619D3S(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11222,Price reference "real-time change" China/Hongkong。 HUF76619D3S package/specs, Download HUF76619D3S、Datasheet。