MOSFET N-CH 55V 35A D2PAK HUF75321S3S
The pictures are for reference only
Description:
MOSFET N-CH 55V 35A D2PAK
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF75321S3S(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8903,Price reference "real-time change" China/Hongkong。 HUF75321S3S package/specs, Download HUF75321S3S、Datasheet。