MOSFET N-CH 200V 18A TO220-3 FQP18N20V2
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Description:
MOSFET N-CH 200V 18A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP18N20V2(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory47502,Price reference "real-time change" China/Hongkong。 FQP18N20V2 package/specs, Download FQP18N20V2、Datasheet。