MOSFET N-CH 900V 2.8A D2PAK FQB2NA90TM
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Description:
MOSFET N-CH 900V 2.8A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB2NA90TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80100,Price reference "real-time change" China/Hongkong。 FQB2NA90TM package/specs, Download FQB2NA90TM、Datasheet。