MOSFET N-CH 100V 20A TO252AA HUF76629D3S
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Description:
MOSFET N-CH 100V 20A TO252AA
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF76629D3S(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25011,Price reference "real-time change" China/Hongkong。 HUF76629D3S package/specs, Download HUF76629D3S、Datasheet。