MOSFET N-CH 200V 11A TO252AA HUF75925D3ST
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Description:
MOSFET N-CH 200V 11A TO252AA
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF75925D3ST(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15789,Price reference "real-time change" China/Hongkong。 HUF75925D3ST package/specs, Download HUF75925D3ST、Datasheet。