MOSFET N-CH 100V 20A IPAK HUF76629D3
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Description:
MOSFET N-CH 100V 20A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF76629D3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21057,Price reference "real-time change" China/Hongkong。 HUF76629D3 package/specs, Download HUF76629D3、Datasheet。