MOSFET N-CH 120V 32A D2PAK FQB32N12V2TM
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Description:
MOSFET N-CH 120V 32A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB32N12V2TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98229,Price reference "real-time change" China/Hongkong。 FQB32N12V2TM package/specs, Download FQB32N12V2TM、Datasheet。