MOSFET N-CH 100V 36A TO3P FQA33N10L
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Description:
MOSFET N-CH 100V 36A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQA33N10L(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90515,Price reference "real-time change" China/Hongkong。 FQA33N10L package/specs, Download FQA33N10L、Datasheet。