MOSFET N-CH 55V 66A D2PAK HUF75333S3ST
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Description:
MOSFET N-CH 55V 66A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF75333S3ST(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97304,Price reference "real-time change" China/Hongkong。 HUF75333S3ST package/specs, Download HUF75333S3ST、Datasheet。