MOSFET N-CH 800V 2.8A TO220F FQPF5N80
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Description:
MOSFET N-CH 800V 2.8A TO220F
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQPF5N80(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21860,Price reference "real-time change" China/Hongkong。 FQPF5N80 package/specs, Download FQPF5N80、Datasheet。