MOSFET N-CH 100V 33A D2PAK HUF75631S3S
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Description:
MOSFET N-CH 100V 33A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF75631S3S(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16377,Price reference "real-time change" China/Hongkong。 HUF75631S3S package/specs, Download HUF75631S3S、Datasheet。