MOSFET N-CH 800V 4.8A I2PAK FQI5N80TU
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Description:
MOSFET N-CH 800V 4.8A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI5N80TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78444,Price reference "real-time change" China/Hongkong。 FQI5N80TU package/specs, Download FQI5N80TU、Datasheet。