MOSFET N-CH 60V 20A DPAK HUFA75429D3ST
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Description:
MOSFET N-CH 60V 20A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUFA75429D3ST(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79453,Price reference "real-time change" China/Hongkong。 HUFA75429D3ST package/specs, Download HUFA75429D3ST、Datasheet。