MOSFET N-CH 800V 5.8A TO220-3 FQP6N80
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Description:
MOSFET N-CH 800V 5.8A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP6N80(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48943,Price reference "real-time change" China/Hongkong。 FQP6N80 package/specs, Download FQP6N80、Datasheet。