MOSFET N-CH 800V 7A TO3P FQA7N80C
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Description:
MOSFET N-CH 800V 7A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQA7N80C(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory66132,Price reference "real-time change" China/Hongkong。 FQA7N80C package/specs, Download FQA7N80C、Datasheet。