MOSFET N-CH 500V 13A D2PAK FQB13N50CTM
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Description:
MOSFET N-CH 500V 13A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB13N50CTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22819,Price reference "real-time change" China/Hongkong。 FQB13N50CTM package/specs, Download FQB13N50CTM、Datasheet。