MOSFET N-CH 800V 4.8A D2PAK FQB5N80TM
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Description:
MOSFET N-CH 800V 4.8A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB5N80TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42190,Price reference "real-time change" China/Hongkong。 FQB5N80TM package/specs, Download FQB5N80TM、Datasheet。