MOSFET N-CH 600V 12A D2PAK FQB12N60CTM
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Description:
MOSFET N-CH 600V 12A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB12N60CTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22044,Price reference "real-time change" China/Hongkong。 FQB12N60CTM package/specs, Download FQB12N60CTM、Datasheet。