MOSFET N-CH 600V 12A I2PAK FQI12N60CTU
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Description:
MOSFET N-CH 600V 12A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI12N60CTU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49013,Price reference "real-time change" China/Hongkong。 FQI12N60CTU package/specs, Download FQI12N60CTU、Datasheet。