MOSFET N-CH 800V 7.2A TO3P FQA7N80
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Description:
MOSFET N-CH 800V 7.2A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQA7N80(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55978,Price reference "real-time change" China/Hongkong。 FQA7N80 package/specs, Download FQA7N80、Datasheet。