MOSFET N-CH 600V 3.9A DPAK FCD4N60TF
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Description:
MOSFET N-CH 600V 3.9A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCD4N60TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1418,Price reference "real-time change" China/Hongkong。 FCD4N60TF package/specs, Download FCD4N60TF、Datasheet。