MOSFET N-CH 30V 4A 8SOIC FDFS6N754
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Description:
MOSFET N-CH 30V 4A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDFS6N754(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89882,Price reference "real-time change" China/Hongkong。 FDFS6N754 package/specs, Download FDFS6N754、Datasheet。