MOSFET P-CH 20V 3.3A 8SOIC FDFS2P102
The pictures are for reference only
Description:
MOSFET P-CH 20V 3.3A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDFS2P102(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33508,Price reference "real-time change" China/Hongkong。 FDFS2P102 package/specs, Download FDFS2P102、Datasheet。