MOSFET N-CH 30V 6A 8SOIC FDFS6N303
The pictures are for reference only
Description:
MOSFET N-CH 30V 6A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDFS6N303(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94742,Price reference "real-time change" China/Hongkong。 FDFS6N303 package/specs, Download FDFS6N303、Datasheet。