MOSFET N-CH 150V 4.1A 8SO FDS2070N3
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Description:
MOSFET N-CH 150V 4.1A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS2070N3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2044,Price reference "real-time change" China/Hongkong。 FDS2070N3 package/specs, Download FDS2070N3、Datasheet。