MOSFET N-CH 200V 30A D2PAK NTB30N20G
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Description:
MOSFET N-CH 200V 30A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTB30N20G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63886,Price reference "real-time change" China/Hongkong。 NTB30N20G package/specs, Download NTB30N20G、Datasheet。