MOSFET N-CH 100V 12A IPAK NTD12N10-1G
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Description:
MOSFET N-CH 100V 12A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD12N10-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50920,Price reference "real-time change" China/Hongkong。 NTD12N10-1G package/specs, Download NTD12N10-1G、Datasheet。