MOSFET N-CH 100V 12A DPAK NTD6600NT4G
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Description:
MOSFET N-CH 100V 12A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD6600NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92153,Price reference "real-time change" China/Hongkong。 NTD6600NT4G package/specs, Download NTD6600NT4G、Datasheet。