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    Home/    Category/    MOSFET/    NTD85N02R-1G

    MOSFET N-CH 24V 12A/85A IPAK NTD85N02R-1G

    NTD85N02R-1G image
    The pictures are for reference only
    Brand:
    ON
    Model:
    NTD85N02R-1G
    Description:
    MOSFET N-CH 24V 12A/85A IPAK
    Stock:
    34024
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    12A(Ta),85A(Tc)
  • Drain source voltage (Vdss)
    24 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    17.7 nC @ 5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    2050 pF @ 20 V
  • On resistance (maximum) for different Ids and Vgs
    5.2 mΩ @ 20A,10V
  • Power dissipation (maximum)
    1.25W(Ta),78.1W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    2V @ 250µA
  • packing
    pipe
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    I-PAK
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
    • PDFicoDataSheet
    NTD85N02R-1G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34024,Price reference "real-time change" China/Hongkong。 NTD85N02R-1G package/specs, Download NTD85N02R-1G、Datasheet。
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